650V 11A TO-220FM, HIGH-SPEED SW

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650V 11A TO-220FM, HIGH-SPEED SW

Name	Value
Mfr	Rohm Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 320µA
Base Product Number	R6511
Operating Temperature	150°C(TJ)
Rds On (Max) @ Id, Vgs	400mOhm @ 3.8A, 10V
Power Dissipation (Max)	53W (Tc)
Supplier Device Package	TO-220FM
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)