SICFET N-CH 1200V 40A H2PAK-2

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SICFET N-CH 1200V 40A H2PAK-2

Name	Value
Mfr	STMicroelectronics
Series	-
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Base Product Number	SCT30
Operating Temperature	-55°C~200°C(TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Power Dissipation (Max)	270W (Tc)
Supplier Device Package	H2Pak-2
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)