SILICON CARBIDE POWER MODULE. B

$1,645.72

In Stock

SILICON CARBIDE POWER MODULE. B

SKU Code: BSM300D12P3E005
Model: None
Categories: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Arrays
Brand: Rohm Semiconductor

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SILICON CARBIDE POWER MODULE. B

Name	Value
Mfr	Rohm Semiconductor
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Power - Max	1260W (Tc)
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 91mA
Base Product Number	BSM300
Operating Temperature	-40°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	Module
Gate Charge (Qg) (Max) @ Vgs	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	300A (Tc)

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