
1200V, 576A, HALF BRIDGE, FULL S
Name | Value |
---|---|
Mfr | Rohm Semiconductor |
Series | - |
Package | Bulk |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Power - Max | 2450W (Tc) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.6V @ 182mA |
Base Product Number | BSM600 |
Operating Temperature | -40°C~150°C(TJ) |
Rds On (Max) @ Id, Vgs | - |
Supplier Device Package | Module |
Gate Charge (Qg) (Max) @ Vgs | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds | 31000pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |