SICFET N-CH 1200V 17A TO263-7

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SICFET N-CH 1200V 17A TO263-7

Name	Value
Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	+22V, -4V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 2.5mA
Base Product Number	SCT3160
Operating Temperature	175°C(TJ)
Rds On (Max) @ Id, Vgs	208mOhm @ 5A, 18V
Power Dissipation (Max)	100W
Supplier Device Package	TO-263-7
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	398 pF @ 800 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)