BIPOLAR DIGITAL TRANSISTOR

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BIPOLAR DIGITAL TRANSISTOR

SKU Code: BCR135TE6327
Model: None
Categories: Discrete Semiconductor Products, Transistors - Bipolar (BJT) - Single, Pre-Biased
Brand: Infineon Technologies

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BIPOLAR DIGITAL TRANSISTOR

Name	Value
Mfr	Infineon Technologies
Series	-
Package	Bulk
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Active
Transistor Type	NPN - Pre-Biased
Resistor - Base (R1)	10 kOhms
Frequency - Transition	150 MHz
Supplier Device Package	PG-SOT23-3-11
Resistor - Emitter Base (R2)	47 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V

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