
DIODE GEN PURP 600V 3A DO201AD
Name | Value |
---|---|
Mfr | EIC SEMICONDUCTOR INC. |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Series | - |
Package | Bag |
Diode Type | Standard |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Product Status | Active |
Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
Supplier Device Package | DO-201AD |
Reverse Recovery Time (trr) | 75 ns |
Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 3A |
Operating Temperature - Junction | -65°C~150°C |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |