SMOS P-CH VDSS:-20V VGSS:-8/+6V

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SMOS P-CH VDSS:-20V VGSS:-8/+6V

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	P-Channel
Vgs (Max)	+6V, -8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	103mOhm @ 1A, 4.5V
Power Dissipation (Max)	500mW (Ta)
Supplier Device Package	UFM
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)