UMOS10 TO-220SIS 80V 3.2MOHM

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UMOS10 TO-220SIS 80V 3.2MOHM

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1.3mA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	3.2mOhm @ 46A, 10V
Power Dissipation (Max)	45W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	7670 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	92A (Tc)