
1700V 425A SiC Half-Bridge
Name | Value |
---|---|
Mfr | GE Aerospace |
Series | - |
Package | Bulk |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Power - Max | 1250W |
Mounting Type | Chassis Mount |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 160mA |
Operating Temperature | 175°C(TJ) |
Rds On (Max) @ Id, Vgs | 4.45mOhm @ 425A, 20V |
Supplier Device Package | - |
Gate Charge (Qg) (Max) @ Vgs | 18V |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Input Capacitance (Ciss) (Max) @ Vds | 29100pF @ 900V |
Current - Continuous Drain (Id) @ 25°C | 425A (Tc) |