SIC MOSFET, 1200V 50MOHM, TO-247

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SIC MOSFET, 1200V 50MOHM, TO-247

Name	Value
Mfr	Inventchip
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+20V, -5V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	3.2V @ 6mA
Operating Temperature	-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs	65mOhm @ 20A, 20V
Power Dissipation (Max)	344W (Tc)
Supplier Device Package	TO-247-4
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	2750 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)