GAN FET HEMT 100V5A COTS 4FSMD-A

$299.15

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GAN FET HEMT 100V5A COTS 4FSMD-A

Name	Value
Mfr	EPC Space, LLC
Series	-
Package	Tray
FET Type	N-Channel
Vgs (Max)	+6V, -4V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	4-SMD, No Lead
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1.2mA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	44mOhm @ 5A, 5V
Power Dissipation (Max)	-
Supplier Device Package	4-SMD
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 5 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	233 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)