
DIODE SIL CARB 650V 12A TO252-2
Name | Value |
---|---|
Mfr | PN Junction Semiconductor |
Speed | No Recovery Time > 500mA (Io) |
Series | P3D |
Package | Tape & Reel (TR) |
Diode Type | Silicon Carbide Schottky |
Package / Case | TO-252-2 |
Product Status | Active |
Supplier Device Package | TO-252-2 |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 12A |
Operating Temperature - Junction | -55°C~175°C(TJ) |