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DIODE SIL CARB 650V 12A TO252-2

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DIODE SIL CARB 650V 12A TO252-2
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DIODE SIL CARB 650V 12A TO252-2

NameValue
MfrPN Junction Semiconductor
SpeedNo Recovery Time > 500mA (Io)
SeriesP3D
PackageTape & Reel (TR)
Diode TypeSilicon Carbide Schottky
Package / CaseTO-252-2
Product StatusActive
Supplier Device PackageTO-252-2
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)12A
Operating Temperature - Junction-55°C~175°C(TJ)