
SICFET N-CH 650V 9A DFN5*6
Name | Value |
---|---|
Mfr | PN Junction Semiconductor |
Series | P3M |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | +20V, -8V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | DFN5*6 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 5mA |
Operating Temperature | -55°C~175°C(TJ) |
Rds On (Max) @ Id, Vgs | 500mOhm @ 4.5A, 15V |
Power Dissipation (Max) | 26W |
Supplier Device Package | DFN5*6 |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Current - Continuous Drain (Id) @ 25°C | 9A |