
1200V HALF-BRIDGE
Name | Value |
---|---|
Mfr | PN Junction Semiconductor |
Series | - |
Package | Tray |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Power - Max | - |
Mounting Type | Chassis Mount |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 5V @ 100mA |
Operating Temperature | -40°C~175°C(TJ) |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 300A, 20V |
Supplier Device Package | Module |
Gate Charge (Qg) (Max) @ Vgs | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds | 29.5pF @ 1000V |
Current - Continuous Drain (Id) @ 25°C | 350A |