
SICFET N-CH 1700V 5.5A TO-220F-3
Name | Value |
---|---|
Mfr | PN Junction Semiconductor |
Series | P3M |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | +19V, -8V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220F-2 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 2mA (Typ) |
Operating Temperature | -55°C~175°C(TJ) |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 15V |
Power Dissipation (Max) | 51W |
Supplier Device Package | TO-220F-2L |
Drain to Source Voltage (Vdss) | 1700 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Current - Continuous Drain (Id) @ 25°C | 5.5A |