N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.

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N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.

Name	Value
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
Power Dissipation (Max)	120W (Tc)
Supplier Device Package	8-DFN (5.2x5.86)
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	5950 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	95A (Tc)