N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.

$0.59

In Stock

N-Channel 20 V 30A (Ta) 40W (Ta) Through Hole TO-220

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Name	Value
Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 250µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	13mOhm @ 20A, 4.5V
Power Dissipation (Max)	40W (Ta)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)