N650V,RD(MAX)<170M@10V,VTH2.5V~4

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N650V,RD(MAX)<170M@10V,VTH2.5V~4

Name	Value
Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	170mOhm @ 10A, 10V
Power Dissipation (Max)	151W (Tc)
Supplier Device Package	TO-247
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1724 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)