N 200V, RD(MAX)<0.16@10V,VTH1.0V

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N 200V, RD(MAX)<0.16@10V,VTH1.0V

Name	Value
Mfr	Goford Semiconductor
Series	18N20
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	160mOhm @ 9A, 10V
Power Dissipation (Max)	65.8W (Tc)
Supplier Device Package	TO-252
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	836 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Tj)