N100V, 21A,RD<9.5M@10V,VTH1.2V~2

$0.94

In Stock

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

SKU Code: GT095N10S
Model: None
Categories: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Single
Brand: Goford Semiconductor

Add to Wish List

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

Name	Value
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Product Status	Active
Vgs(th) (Max) @ Id	2.6V @ 250µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	9.5mOhm @ 20A, 10V
Power Dissipation (Max)	8W (Tc)
Supplier Device Package	8-SOP
Gate Charge (Qg) (Max) @ Vgs	29.4 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)

Please Login to Leave a Review