N-CHANNEL SILICON CARBIDE POWER

$39.54

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N-CHANNEL SILICON CARBIDE POWER

Name	Value
Mfr	ANBON SEMICONDUCTOR (INT'L) LIMITED
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiC (Silicon Carbide Junction Transistor)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 15mA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Power Dissipation (Max)	463W (Tc)
Supplier Device Package	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	195 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)