N100V, 3A,RD<220M@10V,VTH1.0V~2.

$0.37

In Stock

N100V, 3A,RD<220M@10V,VTH1.0V~2.

SKU Code: G2K3N10L6
Model: None
Categories: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Arrays
Brand: Goford Semiconductor

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N100V, 3A,RD<220M@10V,VTH1.0V~2.

Name	Value
Mfr	Goford Semiconductor
Series	G
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Power - Max	1.67W (Tc)
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	220mOhm @ 2A, 10V
Supplier Device Package	SOT-23-6L
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 4.5V
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	536pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)

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