MOSFET P-CH 20V 6A 6UDFNB

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MOSFET P-CH 20V 6A 6UDFNB

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6J502
Operating Temperature	150°C(TJ)
Rds On (Max) @ Id, Vgs	23.1mOhm @ 4A, 4.5V
Power Dissipation (Max)	1W (Ta)
Supplier Device Package	6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs	24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)