MOSFET N-CH 250V 630MA 4DIP

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MOSFET N-CH 250V 630MA 4DIP

Name	Value
Mfr	Vishay Siliconix
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	IRFD224
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	1.1Ohm @ 380mA, 10V
Power Dissipation (Max)	1W (Ta)
Supplier Device Package	4-HVMDIP
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Drain to Source Voltage (Vdss)	250 V
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	630mA (Ta)