MOSFET N/P-CH 20V 0.18A/0.1A US6

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MOSFET N/P-CH 20V 0.18A/0.1A US6

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 1.2V Drive
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6L35
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Supplier Device Package	US6
Gate Charge (Qg) (Max) @ Vgs	-
Drain to Source Voltage (Vdss)	20V
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C	180mA, 100mA