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DIODE GEN PURP 800V 1.4A D-5B

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DIODE GEN PURP 800V 1.4A D-5B
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DIODE GEN PURP 800V 1.4A D-5B

NameValue
MfrMicrosemi Corporation
SpeedFast Recovery =< 500ns, > 200mA (Io)
Series-
PackageBulk
Diode TypeStandard
Mounting TypeSurface Mount
Package / CaseSQ-MELF, E
Product StatusActive
Base Product Number1N6629
Capacitance @ Vr, F40pF @ 10V, 1MHz
Supplier Device PackageD-5B
Reverse Recovery Time (trr)60 ns
Current - Reverse Leakage @ Vr2 µA @ 800 V
Voltage - DC Reverse (Vr) (Max)800 V
Current - Average Rectified (Io)1.4A
Operating Temperature - Junction-65°C~150°C
Voltage - Forward (Vf) (Max) @ If1.4 V @ 1.4 A