MOSFET N-CH 600V 9.7A 4DFN

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MOSFET N-CH 600V 9.7A 4DFN

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	Super Junction
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 500µA
Base Product Number	TK10V60
Operating Temperature	150°C(TJ)
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Power Dissipation (Max)	88.3W (Tc)
Supplier Device Package	4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)