
MOSFET N-CH 200V 580A Y3-LI
Name | Value |
---|---|
Mfr | IXYS |
Series | HiPerFET™ |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Chassis Mount |
Package / Case | Y3-Li |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 50mA |
Base Product Number | VMO580 |
Operating Temperature | -40°C~150°C(TJ) |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 430A, 10V |
Power Dissipation (Max) | - |
Supplier Device Package | Y3-Li |
Gate Charge (Qg) (Max) @ Vgs | 2750 nC @ 10 V |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 580A (Tc) |