
DIODE SILICON 650V 17A TO220
Name | Value |
---|---|
Mfr | Microsemi Corporation |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Bulk |
Diode Type | Silicon Carbide Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Obsolete |
Diode Configuration | 1 Pair Common Cathode |
Supplier Device Package | TO-220 |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Operating Temperature - Junction | -55°C~150°C |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
Current - Average Rectified (Io) (per Diode) | 17A |