GANFET N-CH 200V 8.5A DIE

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GANFET N-CH 200V 8.5A DIE

Name	Value
Mfr	EPC
Series	eGaN®
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	+6V, -4V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1.5mA
Base Product Number	EPC20
Operating Temperature	-40°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	42mOhm @ 7A, 5V
Power Dissipation (Max)	-
Supplier Device Package	Die
Gate Charge (Qg) (Max) @ Vgs	2.9 nC @ 5 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	288 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta)