SICFET N-CH 1200V 41A D3PAK

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SICFET N-CH 1200V 41A D3PAK

Name	Value
Mfr	Microsemi Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 1mA (Typ)
Operating Temperature	-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Power Dissipation (Max)	273W (Tc)
Supplier Device Package	D3Pak
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	2560 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)