GAN TRANS 2N-CH 100V BUMPED DIE

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GAN TRANS 2N-CH 100V BUMPED DIE

SKU Code: EPC2106ENGRT
Model: None
Categories: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Arrays
Brand: EPC

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GAN TRANS 2N-CH 100V BUMPED DIE

Name	Value
Mfr	EPC
Series	eGaN®
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Power - Max	-
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	2.5V @ 600µA
Operating Temperature	-40°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	70mOhm @ 2A, 5V
Supplier Device Package	Die
Gate Charge (Qg) (Max) @ Vgs	0.73nC @ 5V
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.7A

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