GAN TRANS 2N-CH 120V BUMPED DIE

$2.26

In Stock

GAN TRANS 2N-CH 120V BUMPED DIE

SKU Code: EPC2110ENGRT
Model: None
Categories: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Arrays
Brand: EPC

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GAN TRANS 2N-CH 120V BUMPED DIE

Name	Value
Mfr	EPC
Series	eGaN®
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	2 N-Channel (Dual) Common Source
FET Feature	GaNFET (Gallium Nitride)
Power - Max	-
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 700µA
Base Product Number	EPC2110
Operating Temperature	-40°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	60mOhm @ 4A, 5V
Supplier Device Package	Die
Gate Charge (Qg) (Max) @ Vgs	0.8nC @ 5V
Drain to Source Voltage (Vdss)	120V
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 60V
Current - Continuous Drain (Id) @ 25°C	3.4A

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