MOSFET N-CH 650V 9.3A DPAK

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MOSFET N-CH 650V 9.3A DPAK

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 350µA
Base Product Number	TK9P65
Operating Temperature	150°C(TJ)
Rds On (Max) @ Id, Vgs	560mOhm @ 4.6A, 10V
Power Dissipation (Max)	80W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta)