MOSFET N-CH 850V 65A SOT227B

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MOSFET N-CH 850V 65A SOT227B

Name	Value
Mfr	IXYS
Series	HiPerFET™, Ultra X
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 8mA
Base Product Number	IXFN66
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	65mOhm @ 33A, 10V
Power Dissipation (Max)	830W (Tc)
Supplier Device Package	SOT-227B
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Drain to Source Voltage (Vdss)	850 V
Input Capacitance (Ciss) (Max) @ Vds	8900 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)