
SICFET N-CH 1200V 80A D3PAK
Name | Value |
---|---|
Mfr | Microsemi Corporation |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | +25V, -10V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Operating Temperature | -55°C~175°C(TJ) |
Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
Power Dissipation (Max) | 625W (Tc) |
Supplier Device Package | D3Pak |
Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
Drain to Source Voltage (Vdss) | 1200 V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |