GANFET N-CH 650V 20A 4PQFN

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GANFET N-CH 650V 20A 4PQFN

Name	Value
Mfr	Transphorm
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±18V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	4-PowerDFN
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.6V @ 300µA
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V
Power Dissipation (Max)	96W (Tc)
Supplier Device Package	4-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)