SICFET N-CH 650V 30A TO247N

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SICFET N-CH 650V 30A TO247N

Name	Value
Mfr	Rohm Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+22V, -4V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 5mA
Base Product Number	SCT3080
Operating Temperature	175°C(TJ)
Rds On (Max) @ Id, Vgs	104mOhm @ 10A, 18V
Power Dissipation (Max)	134W (Tc)
Supplier Device Package	TO-247N
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	571 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)