
DIODE SILICON CARBIDE 650V 4A
Name | Value |
---|---|
Mfr | Rohm Semiconductor |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Diode Type | Silicon Carbide Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Not For New Designs |
Base Product Number | SCS304 |
Capacitance @ Vr, F | 200pF @ 1V, 1MHz |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 4A |
Operating Temperature - Junction | 175°C(Max) |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |