MOSFET N-CH 40V 12A 6UDFNB

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MOSFET N-CH 40V 12A 6UDFNB

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 100µA
Base Product Number	SSM6K514
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	11.6mOhm @ 4A, 10V
Power Dissipation (Max)	2.5W (Ta)
Supplier Device Package	6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)