MOSFET N/P-CH 20V 800MA UF6

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MOSFET N/P-CH 20V 800MA UF6

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 1.8V Drive
Power - Max	500mW
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6L13
Operating Temperature	150°C(TJ)
Rds On (Max) @ Id, Vgs	143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V
Supplier Device Package	UF6
Gate Charge (Qg) (Max) @ Vgs	-
Drain to Source Voltage (Vdss)	20V
Input Capacitance (Ciss) (Max) @ Vds	268pF @ 10V, 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)