MOSFET N-CH 650V 2.3A POWERFLAT

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MOSFET N-CH 650V 2.3A POWERFLAT

Name	Value
Mfr	STMicroelectronics
Series	MDmesh™ M2
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±25V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	STL3
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	1.8Ohm @ 1A, 10V
Power Dissipation (Max)	22W (Tc)
Supplier Device Package	PowerFlat™ (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)