IC POWER MOSFET 1200V HIP247

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IC POWER MOSFET 1200V HIP247

Name	Value
Mfr	STMicroelectronics
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 250µA (Typ)
Base Product Number	SCTWA10
Operating Temperature	-55°C~200°C(TJ)
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 20V
Power Dissipation (Max)	110W (Tc)
Supplier Device Package	HiP247™ Long Leads
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)