MOSFET N-CHANNEL 600V 4A TO251

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MOSFET N-CHANNEL 600V 4A TO251

Name	Value
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Base Product Number	TSM4NB60
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
Power Dissipation (Max)	50W (Tc)
Supplier Device Package	TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)