MOSFET N-CH 650V 7A ITO220S

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MOSFET N-CH 650V 7A ITO220S

Name	Value
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Base Product Number	TSM7
Operating Temperature	-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs	1.35Ohm @ 2A, 10V
Power Dissipation (Max)	44.6W (Tc)
Supplier Device Package	ITO-220S
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1169 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)