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DIODE GEN PURP 50V 600MA TS-1

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DIODE GEN PURP 50V 600MA TS-1
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DIODE GEN PURP 50V 600MA TS-1

NameValue
MfrTaiwan Semiconductor Corporation
SpeedFast Recovery =< 500ns, > 200mA (Io)
Series-
PackageTape & Box (TB)
Diode TypeStandard
Mounting TypeThrough Hole
Package / CaseT-18, Axial
Product StatusActive
Base Product NumberUG06
Capacitance @ Vr, F9pF @ 4V, 1MHz
Supplier Device PackageTS-1
Reverse Recovery Time (trr)15 ns
Current - Reverse Leakage @ Vr5 µA @ 50 V
Voltage - DC Reverse (Vr) (Max)50 V
Current - Average Rectified (Io)600mA
Operating Temperature - Junction-55°C~150°C
Voltage - Forward (Vf) (Max) @ If950 mV @ 600 mA