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DIODE GEN PURP 200V 1A TS-1

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DIODE GEN PURP 200V 1A TS-1
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DIODE GEN PURP 200V 1A TS-1

NameValue
MfrTaiwan Semiconductor Corporation
SpeedStandard Recovery >500ns, > 200mA (Io)
Series-
PackageTape & Box (TB)
Diode TypeStandard
Mounting TypeThrough Hole
Package / CaseT-18, Axial
Product StatusActive
Base Product Number1T3G
Capacitance @ Vr, F10pF @ 4V, 1MHz
Supplier Device PackageTS-1
Current - Reverse Leakage @ Vr5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Current - Average Rectified (Io)1A
Operating Temperature - Junction-55°C~150°C
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A