DIODE GEN PURP 800V 1A TS-1

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DIODE GEN PURP 800V 1A TS-1

SKU Code: F1T6GHA0G
Model: None
Categories: Discrete Semiconductor Products, Diodes - Rectifiers - Single
Brand: Taiwan Semiconductor Corporation

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DIODE GEN PURP 800V 1A TS-1

Name	Value
Mfr	Taiwan Semiconductor Corporation
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	Automotive, AEC-Q101
Package	Tape & Box (TB)
Diode Type	Standard
Mounting Type	Through Hole
Package / Case	T-18, Axial
Product Status	Active
Base Product Number	F1T6
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Supplier Device Package	TS-1
Reverse Recovery Time (trr)	500 ns
Current - Reverse Leakage @ Vr	5 µA @ 800 V
Voltage - DC Reverse (Vr) (Max)	800 V
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C~150°C
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A

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