MOSFET N-CH 20V 250MA VESM

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MOSFET N-CH 20V 250MA VESM

Name	Value
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIII
Package	Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-723
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 100µA
Base Product Number	SSM3K35
Operating Temperature	150°C(TJ)
Rds On (Max) @ Id, Vgs	1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max)	500mW (Ta)
Supplier Device Package	VESM
Gate Charge (Qg) (Max) @ Vgs	0.34 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	36 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)